International Display Workshops General Incorporated Association

11:45 〜 12:00

[AMD1-4L] Effect of Nitrogen Plasma on Low-resistive Source/Drain Formation in Self-aligned In-Ga-Zn-Sn-O Thin-film Transistors

*Hiroshi Tsuji1, Tatsuya Takei1, Mototaka Ochi2, Masashi Miyakawa1, Kohei Nishiyama2, Yoshiki Nakajima1, Mitsuru Nakata1 (1. NHK(Japan), 2. Kobe Steel, Ltd.(Japan))

Thin-film transistor, Self-align, In-Ga-Zn-Sn-O, Nitrogen plasma

https://doi.org/10.36463/idw.2020.0149

The effect of nitrogen plasma on formation of the low-resistive source/drain (S/D) regions in self-aligned (SA) In-Ga-Zn-Sn-O (IGZTO) thin-film transistors (TFTs) was investigated. The width-normalized parasitic SD resistance of SA-IGZTO-TFTs with nitrogen plasma treatment was 11.3 W·cm, which is ca. 40% lower than that with argon plasma treatment.