Effect of Nitrogen Plasma on Low-resistive Source/Drain Formation in Self-aligned In-Ga-Zn-Sn-O Thin-film Transistors

Hiroshi Tsuji

doi:https://doi.org/10.36463/idw.2020.0149

11:45 〜 12:00

[AMD1-4L] Effect of Nitrogen Plasma on Low-resistive Source/Drain Formation in Self-aligned In-Ga-Zn-Sn-O Thin-film Transistors

*Hiroshi Tsuji¹, Tatsuya Takei¹, Mototaka Ochi², Masashi Miyakawa¹, Kohei Nishiyama², Yoshiki Nakajima¹, Mitsuru Nakata¹ (1. NHK(Japan), 2. Kobe Steel, Ltd.(Japan))

Thin-film transistor, Self-align, In-Ga-Zn-Sn-O, Nitrogen plasma

https://doi.org/10.36463/idw.2020.0149

The effect of nitrogen plasma on formation of the low-resistive source/drain (S/D) regions in self-aligned (SA) In-Ga-Zn-Sn-O (IGZTO) thin-film transistors (TFTs) was investigated. The width-normalized parasitic SD resistance of SA-IGZTO-TFTs with nitrogen plasma treatment was 11.3 W·cm, which is ca. 40% lower than that with argon plasma treatment.

Proceedings of the International Display Workshops Volume 27 (IDW '20)

[AMD1-4L] Effect of Nitrogen Plasma on Low-resistive Source/Drain Formation in Self-aligned In-Ga-Zn-Sn-O Thin-film Transistors