Low Temperature Solution Processed Hybrid Gate Insulators for High Performance Oxide Thin-Film Transistors

Juan Paolo Bermundo

doi:https://doi.org/10.36463/idw.2020.0895

16:10 〜 16:25

[FLX2-4L] Low Temperature Solution Processed Hybrid Gate Insulators for High Performance Oxide Thin-Film Transistors

*Juan Paolo Bermundo¹, Ployrung Kesorn¹, Mami N. Fujii¹, Yasuaki Ishikawa², Yukiharu Uraoka¹ (1. Nara Institute of Science and Technology(Japan), 2. Aoyama Gakuin University(Japan))

Low temperature process, high-k gate insulator, solution process, high mobility

https://doi.org/10.36463/idw.2020.0895

High mobilities of ~30 cm²/Vs in amorphous InGaZnO thin-film transistors were realized through application of a low temperature solution-processed hybrid gate insulator. The combination of high-k BaTiO_x nanoparticles and a polysiloxane polymer matrix enables a lower process temperature of 300°C from 650 °C while ensuring enhanced performance and low leakage current.

Proceedings of the International Display Workshops Volume 27 (IDW '20)

[FLX2-4L] Low Temperature Solution Processed Hybrid Gate Insulators for High Performance Oxide Thin-Film Transistors