16:10 〜 18:10
[FMCp3-7] Improvement of the Surface Roughness of LTPS Thin Films with Additional Laser Irradiation
Low-temperature poly-Si, Thin-film transistors, Excimer-laser annealing, Surface flattening
A well-known major problem in thin-film transistor (TFT) manufacturing is the protrusions that form on low-temperature polysilicon thin films after excimer laser annealing, which, in turn, induce gate leakage current in the TFTs. In this presentation, we report the use of additional laser irradiation to reduce the height of protrusions.