4:10 PM - 6:10 PM
[FMCp3-10L] Inductively Coupled Plasma Sputtering System for Oxide Semiconductors for a Large Area Deposition
IGZO, sputtering, ICP
We have developed a Gen.4.5 size ICP sputtering system. The film density was close to the theoretical value and the in-plane uniformity was ± 1% or less. The thickness uniformity was ± 2.2%. By using the ICP sputtering system, both high film density and thickness uniformity could be achieved.