Green Electroluminescence Generated by Band-edge Transition in Ag–In–Ga–S/GaS<em><sub>x</sub></em> Core/shell Quantum Dots

Genichi Motomura

doi:https://doi.org/10.36463/idw.2020.0377

13:20 〜 13:40

[OLED2-2] Green Electroluminescence Generated by Band-edge Transition in Ag–In–Ga–S/GaS_x Core/shell Quantum Dots

*Genichi Motomura¹, Yukiko Iwasaki¹, Tatsuya Kameyama², Tsukasa Torimoto², Taro Uematsu³, Susumu Kuwabata³, Toshimitsu Tsuzuki¹ (1. Japan Broadcasting Cooporation (NHK)(Japan), 2. Nagoya University(Japan), 3. Osaka University(Japan))

quantum dot, electroluminescence, light-emitting diode, band-edge emission

https://doi.org/10.36463/idw.2020.0377

Quantum dot (QD) light-emitting diodes (LEDs) that exhibit vivid green emission were fabricated using Ag−In−Ga−S/GaS_x core/shell QDs. For these QD-LEDs, the broad defect emission in electroluminescence was larger than that in photoluminescence. The addition of an electron transporting material to the emitting layer effectively suppressed the defect emission.

Proceedings of the International Display Workshops Volume 27 (IDW '20)

[OLED2-2] Green Electroluminescence Generated by Band-edge Transition in Ag–In–Ga–S/GaSx Core/shell Quantum Dots

[OLED2-2] Green Electroluminescence Generated by Band-edge Transition in Ag–In–Ga–S/GaS_x Core/shell Quantum Dots