International Display Workshops General Incorporated Association

17:00 〜 17:20

[AMD2-2] Spinel Single Phase Indium Zinc Tin Oxide Thin-Film Transistors with High Mobility and Excellent Uniformity

*Gwang Bok Kim1, Jae Kyeong Jeong1 (1. Hanyang University (Korea))

Indium-Zinc-Tin-Oxide (IZTO), TFT, Spinel, High mobility

https://doi.org/10.36463/idw.2023.0165

In this paper, we demonstrate successful growth of single spinel phase In0.22Zn0.55Sn0.23O1.34 films at 300 °C using meticulous cation composition design and catalytic chemical reaction. The devices exhibit an exceptional field-effect mobility of 83.2 cm2/Vs, along with outstanding reliability under external gate bias stress and excellent uniformity.