16:40 〜 17:00
[FLX1-1 (Invited)] Atmospheric Pressure Spatial Atomic Layer Deposition for Flexible Oxide Semiconductor Thin Film Transistors
Atomic Layer Deposition, Oxide Semiconductor, Flexible TFT, Spatial ALD
This talk will introduce the atmospheric pressure spatial atomic layer deposition with high throughput/yield for In2O3 and InZnO Thin Film Transistors. The device shows excellent performance characteristics, including a field-effect mobility of 69.79 cm2/V·s, a threshold voltage of -0.06 ± 0.22 V, and a subthreshold swing of 0.16 V/decade.