International Display Workshops General Incorporated Association

11:30 〜 11:50

[FMC5-3] Highly Conductive Metal Film Dry Etching via ECR Plasma Source

*JinNyoung Jang1, Jong Hwa Lee1, Sangheon Lee2, Jae Hoon Jung1, Donghoon Kim3, MunPyo Hong3, Sang-Gab Kim4, Soo Ouk Jang5, Kiro Jung2, Chiwoo Kim2 (1. APS Research (Korea), 2. APS Inc. (Korea), 3. Korea University (Korea), 4. Samsung Display Corporation (Korea), 5. Korea institute of Fusion Energy (Korea))

Cu(Copper), ITO(Indium Tin Oxide), Ag(Silver), Dry Etch, ECR Plasma

https://doi.org/10.36463/idw.2023.0356

This paper presents PR masked thin Cu, ITO/Ag/ITO film dry etching performance that is etched by high electron temperature plasma source with low temperature substrate. Dry etching is performed using HCl gas, scanning low temperature susceptor and the electron cyclotron resonance (ECR) plasma produced by rectangular-type microwave slot antenna (ReSLAN) are used.