International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 30 (IDW '23)

Proceedings of the International Display Workshops Volume 30 (IDW '23)

2023年12月6日 〜 2023年12月8日
TOKI MESSE Niigata Convention Center

[FMCp1-2] The Effect of the In2O3 Insertion Layer on HfO2/AlOX-Based Resistive Memory Characteristics

*Minsik Kong1, Jiyong Shim1, Soo-Yeon Lee1 (1. Seoul National University (Korea))

Resistive random-access memory, Resistive switching, HfO2/AlO RRAM, In2O3 insertion layer

https://doi.org/10.36463/idw.2023.0415

We fabricated HfO2/Al2O3-based RRAM structures with an inserted In2O3 layer and investigated the effect of oxygen vacancies by resistive switching measurement. By introducing In2O3 layer, we confirmed the incorporation of oxygen vacancies within the insulating layer of RRAM devices. This indicates that ...