[B-4-3] Internal Loss of InGaAsP/InP Buried Crescent(λ = 1.3 μm) Laser

Hideyo HIGUCHI、Hirofumi NAMIZAKI、Etsuji OOMURA、Ryoichi HIRANO Yasushi SAKAKIBARA、Wataru SUSAKI、Kyoichiro FUJIKAWA (1.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.1982.B-4-3