[B-6-5] Totally Light Controlled Thyristor-Optically Triggerable and Optically Quenchable Static Induction Photo-Thyristor

Jun-ichi Nishizawa、Takashige Tamamushi、Ken-ichi Nonaka (1.Research Institute of Electrical Communication, Tohoku University、2.Semiconductor Research Institute)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-1] A High Resolution CCD Image Sensor Overlaid with an a-Si:H Photoconductive Layer

Shinji Uya、Nozomu Harada、Yoshiaki Hayashimoto、Yukio Endo、Toshikazu Adachi、Okio Yoshida Kyozo Ide、Yoshiaki Komatsubara (1.VLSI Research Center and Electron Devices Lab. TOSHIBA Research and Development Center、2.Electron Devices Engineering Lab. TOSHIBA Corporation)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-2] A Color CCD Image Sensor for Imaging Photographic Negatives

T. H. Lee、R. P. Khosla、B. C. Burkey、T. M. Kelly、D. L. Losee、T. J. Tredwell (1.Research Laboratories, Eastman Kodak Company)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-3] A CCD Imager on Three Types of P-Wells

Shigehiro Miyatake、Tadashi Nagakawa、Kiyotoshi Misawa、Harumi Kosaza、Shoji Sakamoto、Shin-ichi Ogawa、Kozo Fujino、Toshiaki Yamano、Kanpei Iikawa、Jun-ichi Nakai、Osamu Matsui、Katsunobu Awane (1.Engineering Center, Sharp Corporation)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-4] Noise Modeling of New MOS Imaging Device Using Random Noise Suppression (RANS) Circuits

T. Ozaki、N. Ozawa、T. Imaide、H. Ando、S. Ohba (1.Central Research Laboratory, Hitachi, Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-8] Characterization and Microanalysis of LSI Devices, Processes and Materials: Present and Future

S. Kishino、E. Arai (1.Musashi Works of Hitachi Ltd.、2.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-1] Recent Advances in GaAs/(Ga, Al) As Heterojunction Bipolar Transistors

P. M. Asbeck、D. L. Miller (1.Rockwell International Microelectronics Research and Development Center)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-2] Low Noise HEMT with Self-Aligned Gate Structure

K. Joshin、Y. Yamashita、M. Niori、J. Saito、T. Mimura、M. Abe (1.Fujitsu Ltd., Atsugi)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-3] High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Heavily Doped Base

Hiroshi ITO、Tadao ISHIBASHI、Takayuki SUGETA (1.Atsugi Electrical Communication Laboratory, NTT)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-4] A New GaAs HJFET DCFL with Increased Logic Swing

Tatsuo Otsuki、Tetsuya Hamana、Issey Ohta、Masaru Kazumura、Gota Kano (1.Semiconductor Laboratory Matsushita Electronics Corporation)

1984 International Conference on Solid State Devices and Materials |PDF ダウンロード