[D-2-9] Point Defects of GaAs Films on Fluoride/Si Structures and Its Reduction by 2-Step Growth Method

Atsuki ONO、Osamu ISHIYAMA、Kazuo TSUTSUI、Seijiro FURUKAWA (1.Department of Applied Electronics, Graduate School of Science & Engineering, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1990.D-2-9