In-situ Infrared Spectroscopy of Selective CVD of Tungsten Using WF6 and SiH4

Nobuyoshi Kobayashi; Hidekazu Goto; Masayuki Suzuki

doi:https://doi.org/10.7567/SSDM.1990.S-CII-3

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜 1990年8月24日
Hotel Sendai Plaza, Sendai, Japan

[S-CII-3] In-situ Infrared Spectroscopy of Selective CVD of Tungsten Using WF6 and SiH4

Nobuyoshi Kobayashi、Hidekazu Goto、Masayuki Suzuki (1.Central Research Laboratory, Hitachi, Ltd.、2.Semiconductor Design & Development Center, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1990.S-CII-3

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