Sulfur-Passivation Pretreatment of GaAs Surface for Layer-by-Layer Growth and Atomic Layer Epitaxy of ZnSe by MOMBE

Shigeo FUJITA; Yi-hong WU; Yasunori MIYAZAKI; Takashi TOYODA; Yoichi KAWAKAMI; Shizuo FUJITA

doi:https://doi.org/10.7567/SSDM.1990.S-D-6

[S-D-6] Sulfur-Passivation Pretreatment of GaAs Surface for Layer-by-Layer Growth and Atomic Layer Epitaxy of ZnSe by MOMBE

Shigeo FUJITA, Yi-hong WU, Yasunori MIYAZAKI, Takashi TOYODA, Yoichi KAWAKAMI, Shizuo FUJITA (1.Department of Electrical Engineering Kyoto University)

https://doi.org/10.7567/SSDM.1990.S-D-6

1990 International Conference on Solid State Devices and Materials

[S-D-6] Sulfur-Passivation Pretreatment of GaAs Surface for Layer-by-Layer Growth and Atomic Layer Epitaxy of ZnSe by MOMBE