[A-2-5] Impact of Contact Resistance and Junction Capacitance on the Switching Performance in Scaled 0.1μm CMOS Devices
Satoshi Inaba、Tomohisa Mizuno、Masao Iwase、Hiromi Niiyama、Makoto Yoshimi、Akira Toriumi
(1.ULSI Research Laboratories, R&D Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1993.A-2-5