Extremely Low-Noise InP-Based Lattice-Matched HEMT Grown by MOCVD

Shinobu Fujita; Takao Noda; Aki Wagai; Shigehiro Hosoi; Yasuo Ashizawa

doi:https://doi.org/10.7567/SSDM.1993.LC-18

1993 International Conference on Solid State Devices and Materials

1993年8月29日〜 1993年9月1日
Makuhari Messe, Chiba, Japan

[LC-18] Extremely Low-Noise InP-Based Lattice-Matched HEMT Grown by MOCVD

Shinobu Fujita、Takao Noda、Aki Wagai、Shigehiro Hosoi、Yasuo Ashizawa (1.Research and Development Center, Toshiba Corporation、2.Microelectronics Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1993.LC-18

▲