High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure

Kazuo MIYATSUJI; Daisuke UEDA; Kazuo MASAKI; Shinya YAMAKAWA; Chihiro HAMAGUCHI

doi:https://doi.org/10.7567/SSDM.1993.PB-1-11

[PB-1-11] High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure

Kazuo MIYATSUJI、Daisuke UEDA、Kazuo MASAKI、Shinya YAMAKAWA、Chihiro HAMAGUCHI (1.Electronics Research Laboratory, Matsushita Electronics Corporation、2.Anan College of Technology、3.Department of Electronic Engineering, Osaka University)

https://doi.org/10.7567/SSDM.1993.PB-1-11

1993 International Conference on Solid State Devices and Materials

[PB-1-11] High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure