Semi-Insulating, p-type, and n-type Doping in AlSb, GaSb, and AlSb/InAs by a Single Native Defect

Jun Shen; Saied Tehrani; Herb Goronkin; Gary Kramer; Marilyn Adam; John D. Dow

doi:https://doi.org/10.7567/SSDM.1993.PD-2-10

[PD-2-10] Semi-Insulating, p-type, and n-type Doping in AlSb, GaSb, and AlSb/InAs by a Single Native Defect

Jun Shen, Saied Tehrani, Herb Goronkin, Gary Kramer, Marilyn Adam, John D. Dow (1.Motorola Inc., Phoenix Corporate Research Lab, 2.Department of Physics and Astronomy, Arizona State University)

https://doi.org/10.7567/SSDM.1993.PD-2-10

1993 International Conference on Solid State Devices and Materials

[PD-2-10] Semi-Insulating, p-type, and n-type Doping in AlSb, GaSb, and AlSb/InAs by a Single Native Defect