[S-IV-6] Improved Resistance to Oxidation of Silicon Nitride by In-Situ Annealing for the NO Capacitor Dielectric Film

S. H. Kang、S. T. Kim、D. H. Lee、K. H. Kim、S. T. Ahn (1.Advanced Technology Center, Samsung Electronics Co. LTD.)

https://doi.org/10.7567/SSDM.1993.S-IV-6