Compensation Mechanism of Free Hole Carriers in N-Doped ZnSe

Masakatsu Suzuki; Takeshi Uenoyama; Akira Yanase

doi:https://doi.org/10.7567/SSDM.1993.S-VI-13

[S-VI-13] Compensation Mechanism of Free Hole Carriers in N-Doped ZnSe

Masakatsu Suzuki, Takeshi Uenoyama, Akira Yanase (1.Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 2.College of Integrated Arts and Science, University of Osaka Prefecture)

https://doi.org/10.7567/SSDM.1993.S-VI-13

1993 International Conference on Solid State Devices and Materials

[S-VI-13] Compensation Mechanism of Free Hole Carriers in N-Doped ZnSe