[A-6-2] The Impact of Nitrogen Implantation into Highly Doped Polysilicon Gates for Highly Reliable and High Performance Sub-Quarter Micron Dual Gate CMOS

M. Kobayashi、T. Kuroi、M. Shirahata、Y. Okumura、S. Kusunoki、M. Inuishi、N. Tsubouchi (1.ULSI Laboratory, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.1994.A-6-2