Enhanced Conductivity and Retarded Boron Diffusion in the As Preamorphized p+Poly-Si Gate

Sang Jik Kwon; Yeo Hwan Kim; Jong Duk Lee

doi:https://doi.org/10.7567/SSDM.1994.A-8-3

1994 International Conference on Solid State Devices and Materials

1994年8月23日〜 1994年8月26日
Pacifico Yokohama, Yokohama, Japan

[A-8-3] Enhanced Conductivity and Retarded Boron Diffusion in the As Preamorphized p+Poly-Si Gate

Sang Jik Kwon、Yeo Hwan Kim、Jong Duk Lee (1.Dept. of Electronics Engineering, Kyungwon Univ.、2.ETRI、3.Inter-Univ. Semicon. Res. Center, Seoul Nat. Univ.)

https://doi.org/10.7567/SSDM.1994.A-8-3

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