[C-9-3] Highly Reliable N2O-Oxynitrided Tunnel Oxides for Flash Memory

Masahiro Ushiyama, Masataka Kato, Tetsuo Adachi, Hitoshi Kume, Naoki Miyamoto, Toshiyuki Mine, Kiyoshi Ogata, Takashi Nishida, Yuzuru Ohji (1.Central Research Lab., Hitachi, Ltd., 2.Hitachi Device Engineering Co., 3.Production Engineering Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1994.C-9-3