High Density Flash Memory Using a Novel Bipolar Action-Controlled Electrical Fuse

Jeong-Hyong Yi; Jonghan Kim; Jeong-Hyuk Choi; Chil-Hee Chung; Sung Tae Ahn; Oh-Hyun Kwon

doi:https://doi.org/10.7567/SSDM.1996.PC-3-3

1996 International Conference on Solid State Devices and Materials

Aug 26, 1996 - Aug 29, 1996
Pacifico Yokohama, Yokohama, Japan

[PC-3-3] High Density Flash Memory Using a Novel Bipolar Action-Controlled Electrical Fuse

Jeong-Hyong Yi, Jonghan Kim, Jeong-Hyuk Choi, Chil-Hee Chung, Sung Tae Ahn, Oh-Hyun Kwon (1.Memory Division, Semiconductor Business, Samsung Electronics Co. LTD.)

https://doi.org/10.7567/SSDM.1996.PC-3-3

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