[B-4-3] Formation of Silicon Oxynitride Films with High Nitrogen Concentration at Low Temperatures

Toshiko Mizokuro、Kenji Yoneda、Yoshihiro Todokoro、Hikaru Kobayashi (1.Institute of Scientific and Industrial Research, Osaka University、2.ULSI Process Technology Development Center, Matsushita Electronic Corporation、3.Research Planning Department, Corporate Research Division, Matsushita Electric Industrial Co., Ltd.、4.PRESTO, Japan Science and Technology Corporation)

https://doi.org/10.7567/SSDM.1998.B-4-3