[C-2-3] Hydride Vapor Phase Epitaxy of GaN on NdGaO3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale

Akihiro WAKAHARA、Takenori YAMAMOTO、Kouji ISHIO、Akira YOSHIDA、Youji SEKI、Osamu ODA (1.Dept. of Electrical and Electronic Eng., Toyohashi Univ. of Technology、2.Central Research Lab., Japan Energy Co.)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-4] Optical Recombination Processes in High Quality GaN Films and InGaN Quantum Wells Grown on FIELO-GaN Substrates

A. Atsushi Yamaguchi、Yasunori Mochizuki、Masashi Mizuta (1.Fundamental Research Laboratories, Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-5] Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma

Shin-Ya Ootomo、Tamotsu Hashizume、Hideki Hasegawa (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-1] Quantum Computation - Theory and Experiments

A. Ekert (1.Centre for Quantum Computation Clarendon Laboratory, University of Oxford)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-2] A Novel Solid-State Quantum Bit in Single-Cooper-Pair Device

Yasunobu Nakamura、Yuri A. Pashkin、Jaw-Shen Tsai (1.NEC Fundamental Research Laboratories、2.CREST, Japan Science and Technology Corporation (JST))

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-3] A High-Speed, Silicon-Based Few-Electron Memory Gain Cell

Andrew C. Irvine、Zahid A. K. Durrani、Haroon Ahmed (1.Microelectronics Research Centre, University of Cambridge, Cavendish Laboratory)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-4] Sub-μm Silicon SETs on Self-Undulated Hyper-Thin SOI Films

K. Uchida、J. Koga、R. Ohba、S. Takagi、A. Toriumi (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-1] Single Electron Memory Devices Based on Silicon Nanocrystals Fabricated by Very High Frequency Plasma Deposition

Amit Dutta、Yoshinori Hayafune、Shigeo Hatatani、Shunri Oda (1.Research Center for Quantum Effect Electronics, Tokyo Institute of Technology)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-2] Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory

Ryuji Ohba、Naoharu Sugiyama、Junji Koga、Ken Uchida、Akira Toriumi (1.Advanced LSI Technology Laboratory, TOSHIBA Corporation)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-3] Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique

Naoji Shimizu、Mitsuhisa Ikeda、Eiji Yoshida、Seiichi Miyazaki、Masataka Hirose (1.Department of Electrical Engineering, Hiroshima University)

1999 International Conference on Solid State Devices and Materials |PDF ダウンロード