[B-7-3] SiO2/Si(111) Interface Structures Formed by Atomic Oxygen

K. Takahashi、H. Nohira、T. Nakamura、T. Ohmi、T. Hattori (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology、2.New Industry Creation Hatchery Center, Tohoku University)

https://doi.org/10.7567/SSDM.2000.B-7-3