[LE-1-1] Very-Large-Gain Collector-Up GaN/W/WO3 Metal Base Transistors

K. Mochizuki、K. Uesugi、P. M. Asbeck、J. Gotoh、T. Mishima、K. Hirata、H. Oda (1.Central Research Laboratory, Hitachi, Ltd.、2.Research Institute for Electronic Science, Hokkaido University、3.ECE Dept., University of California、4.Image-Related Device Development Center, Hitachi, Ltd.、5.Hitachi ULSI Systems Corp.)

https://doi.org/10.7567/SSDM.2000.LE-1-1