[E-5-6] Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
Toshihide Ide、Mitsuaki Shimizu、Akira Suzuki、Xu-Qiang Shen、Hajime Okumura、Toshio Nemoto
(1.Department of Science and Technology, Graduated School of Meiji University、2.National Institute of Advanced Industrial Science and Technology、3.Graduate School of Engineering, Tokai University)
https://doi.org/10.7567/SSDM.2001.E-5-6