[A-1-4] Evaluation of change in drain current due to strain in 0.13-μm-node MOSFETs
Yukihiro Kumagai、Hiroyuki Ohta、Hideo Miura、Fumitoshi Ito、Keiichi Maekawa、Akihiro Shimizu
(1.Mechanical Engineering Research Laboratory, Hitachi, Ltd.、2.Semiconductor & Integrated Circuits Div., Hitachi, Ltd.、3.Hitachi ULSI Systems, Co.)
https://doi.org/10.7567/SSDM.2002.A-1-4