[P11-4] Effect of AIN Spacer Layer in AlGaN/GaN Heterojunction Field Effect Transistors

Toshihide Ide、Mitsuaki Shimizu、Shinji Hara、Dong-Hyun Cho、Kulandaivel Jeganathan、Xu-Qiang Shen、Hajime Okumura、Toshio Nemoto (1.Advanced Industrial Science and Technology (AIST), Power Electronics Research Center、2.R&D Association foe Future Electron Devices (FED), Advanced Power Device laboratory、3.Department of Science and Technology, Graduate School of Meiji University、4.Ultra-Low-Loss Power Device Technology Research Body)

https://doi.org/10.7567/SSDM.2002.P11-4