Screening Effect on Remote Coulomb Scattering due to impurities in Polysilicon Gate of MOSFET

Takamitsu Ishihara; Junji Koga; Shinichi Takagi; Kazuya Matsuzawa

doi:https://doi.org/10.7567/SSDM.2003.A-1-4

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-1-4] Screening Effect on Remote Coulomb Scattering due to impurities in Polysilicon Gate of MOSFET

Takamitsu Ishihara, Junji Koga, Shinichi Takagi, Kazuya Matsuzawa (1.Advanced LSI Thechnology Laboratory, Research and Development Center,Toshiba corporation)

https://doi.org/10.7567/SSDM.2003.A-1-4

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