Re-Examination on the Universality of Si-MOS Inversion Layer Mobility

H. Irie; K. Kita; K. Kyuno; S. Takagi; K. Takasaki; M. Kubota; S. Saito; S. Nishikawa; A. Toriumi

doi:https://doi.org/10.7567/SSDM.2003.A-9-1

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-9-1] Re-Examination on the Universality of Si-MOS Inversion Layer Mobility

H. Irie, K. Kita, K. Kyuno, S. Takagi, K. Takasaki, M. Kubota, S. Saito, S. Nishikawa, A. Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo, 2.Semiconductor Technology Academic Research Center (STARC))

https://doi.org/10.7567/SSDM.2003.A-9-1

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