[C-1-2] Effect of the Film Composition of HfAlON Gate Dielectric on the Structural Transformation and the Electrical Properties through High-temperature Annealing

Masato Koyama、Yuuichi Kamimuta、Mitsuo Koike、Masamichi Suzuki、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2003.C-1-2