Design and Demonstration of High Breakdown Voltage GaN-HEMT using Field Plate Structure for Power Electronics Applications

Wataru Saito; Yoshiharu Takada; Masahiko Kuraguchi; Kunio Tsuda; Ichiro Omura; Tsuneo Ogura

doi:https://doi.org/10.7567/SSDM.2003.G-10-3

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[G-10-3] Design and Demonstration of High Breakdown Voltage GaN-HEMT using Field Plate Structure for Power Electronics Applications

Wataru Saito、Yoshiharu Takada、Masahiko Kuraguchi、Kunio Tsuda、Ichiro Omura、Tsuneo Ogura (1.Toshiba Corporation, Semiconductor Company and Research & Development Center)

https://doi.org/10.7567/SSDM.2003.G-10-3

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