Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+poly-Si/HfAlOx/SiO2 n-MOSFETs

[A-2-2] Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+poly-Si/HfAlOx/SiO2 n-MOSFETs

N. Yasuda、H. Hisamatsu、H. Ota、A. Toriumi (1.MIRAI-ASET、2.MIRAI-ASRC、3.Department of Materials Science, The University of Tokyo)