Study of charge quantization in individual silicon quantum dots using Kelvin Probe Force Microscopy

M. A. Salem; Y. Tsuchiya; K. Usami; H. Mizuta; S. Oda

doi:https://doi.org/10.7567/SSDM.2004.G-7-4

[G-7-4] Study of charge quantization in individual silicon quantum dots using Kelvin Probe Force Microscopy

M. A. Salem、Y. Tsuchiya、K. Usami、H. Mizuta、S. Oda (1.Quantum Nanoelectronics Research Center, Tokyo Institute of Technology、2.Department of Physical Electronics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2004.G-7-4

2004 International Conference on Solid State Devices and Materials

[G-7-4] Study of charge quantization in individual silicon quantum dots using Kelvin Probe Force Microscopy