[P10-1] MFIS-structure Memory Device with High Quality Ferroelectric Sr2(Ta1-x Nbx)2O7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition

Hiroyuki Sakurai、Ichirou Takahashi、Tatsunori Isogai、Kiyoshi Funaiwa、Tomoya Tsunoda、Tetsuya Goto、Masaki Hirayama、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University)

https://doi.org/10.7567/SSDM.2004.P10-1