[P3-2] Effect of Post Thermal Processes on Nitride/W/WNx/poly-Si Gate Stack

Heung-Jae Cho、Se-Aug Jang、Yong Soo Kim、Kwan-Yong Lim、Jae-Geun Oh、Jung-Ho Lee、Tae-Su Park、Tae-Sun Back、Jun-Mo Yang、Hong-Seon Yang、Hyun-Chul Sohn、Jin-Woong Kim (1.Memory R&D Division, Hynix Semiconductor Inc.)

https://doi.org/10.7567/SSDM.2004.P3-2