[P3-23L] TDS measurement for low-k porous silica films incorporated with ethylene groups

Yasutaka Uchida, Yoshiyuki Maruya, Tomohiro Katoh, Yoshito Ito, Koichi Ishida (1.Teikyo Univ. of Sci & Tech, Dept of Media Science)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P4-1] Lateral Graphoepitaxy of Germanium Controlled by Microholes on SiO2 Surface

Takahiro Numai, Takeshi Koide, Takashi Minemoto, Hideyuki Takakura, Yoshihiro Hamakawa (1.Ritsumeikan University, College of Science and Engineering)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P4-2] Width Effect on Hot-Carrier-induced Degradaton for 90nm Partially Depleted SOI CMOSFET

Chieh-Ming Lai, Yean-Kuen Fang, Chia-Che Hu, Wen-Kuan Yeh (1.Institute of Microelectronics, National Cheng Kung University, 2.Department of Computer Science Information Engineering, Shu-Te University, 3.Department of Electrical Engineering, National University of Kaohsiung)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P4-3] High-Performance Modified-Schottky-Barrier S/D p-Channel FinFETs

Chia-Pin Lin, Bing-Yue Tsui (1.Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, 2.National Nano Device Laboratories)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P4-4] Nanoscale Strained Si/SiGe Heterojunction Tri-gate FETs

S. T. Chang, S. H. Hwang (1.Department of Electronic Engineering, Chung Yuan Christian University, 2.Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P4-5] Novel properties of erbium-silicided n-type Schottky barrier MOSFETs

Moongyu Jang, Yarkyeon Kim, Jaeheon Shin, Seongjae Lee (1.Electronics and Telecommunications Research Institute, Future technology Research Division)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P4-6] Short Channel Characteristics of Variable Body Factor FD SOI MOSFETs

Tetsu Ohtou, Toshiharu Nagumo, Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P4-7] A Selectable Logarithmic / Linear Response Active Pixel Sensor Cell with Reduced Fixed-Pattern-Noise Based on DTMOS Operation

Mamoru Terauchi, Atsushi Hamasaki, Arinori Suketa (1.Dept. of Computer Engineering, Fac. of Information Sciences, Hiroshima City University, 2.Dept. of Computer Engineering, Graduate School of Information Sciences, Hiroshima City University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P4-8] Electrostatically Driven XY-stage Based on SOI-MEMS

Fuminori Bouno, Minoru Sasaki, Kazuhiro Hane (1.Tohoku Univ. , Dept. of Nanomechanics)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P4-9L] Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress

Kun-Ming Chen, Hsin-Hui Hu, Guo-Wei Huang, Chun-Yen Chang (1.National Nano Device Laboratories, 2.Department of Electronics Engineering, National Chiao Tung University)

2004 International Conference on Solid State Devices and Materials |PDF Download