[A-1-5] Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs

Hiroyuki Ota、Arito Ogawa、Masaru Kadoshima、Kunihiko Iwamoto、Wataru Mizubayashi、Kenji Okada、Toshihide Nabatame、Hideki Satake、Akira Toriumi (1.MIRAI-ASRC, AIST、2.MIRAI-ASET, AIST、3.The University of Tokyo)

https://doi.org/10.7567/SSDM.2005.A-1-5