Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics

B. H. Lee; R. Choi; S.C. Song; J. Sim; C.D. Young; G. Bersuker; H.K. Park; H. Hwang

doi:https://doi.org/10.7567/SSDM.2005.A-2-1

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[A-2-1] Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics

B. H. Lee、R. Choi、S.C. Song、J. Sim、C.D. Young、G. Bersuker、H.K. Park、H. Hwang (1.SEMATECH、2.IBM assignee、3.Gwangju Institute of Science and Technology)

https://doi.org/10.7567/SSDM.2005.A-2-1

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