The structural origin of determining the coefficient of thermal expansion for porous silica low-k films

Masahiro Yamaji; Nobuhiro Hata; Takahiro Nakayama; Yoshinori Shishida; Yasuyoshi Hyodo; Takamaro Kikkawa

doi:https://doi.org/10.7567/SSDM.2006.G-7-1L

[G-7-1L] The structural origin of determining the coefficient of thermal expansion for porous silica low-k films

Masahiro Yamaji、Nobuhiro Hata、Takahiro Nakayama、Yoshinori Shishida、Yasuyoshi Hyodo、Takamaro Kikkawa (1.Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST)、2.MIRAI-ASRC, AIST、3.MIRAI-Association of Super-Advanced Electronics Technologies、4.Hiroshima University)

https://doi.org/10.7567/SSDM.2006.G-7-1L

2006 International Conference on Solid State Devices and Materials

[G-7-1L] The structural origin of determining the coefficient of thermal expansion for porous silica low-k films