[P-1-29L] Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si Heterostructure

Akito Hara、Naoyoshi Tamura、Tomoji Nakamura (1.Fujitsu Lab. Ltd.、2.Tohoku-Gakuin University)

https://doi.org/10.7567/SSDM.2006.P-1-29L