Realization of 340nm-band high-power (&gt;7mW) InAlGaN quantum well UV-LED with p-type InAlGaN

Sachie Fujikawa; Takayoshi Takano; Yukihiro Kondo; Hideki Hirayama

doi:https://doi.org/10.7567/SSDM.2007.E-8-5

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[E-8-5] Realization of 340nm-band high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN

Sachie Fujikawa、Takayoshi Takano、Yukihiro Kondo、Hideki Hirayama (1.RIKEN (The institute of Physical and Chemical Research)、2.Matsushita Electric Works, Ltd.)

https://doi.org/10.7567/SSDM.2007.E-8-5

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