[P-1-10] Superiority of ALD TiN with TDMAT Precursor for Metal-Gate MOSFET

T. Hayashida¹、K. Endo²、Y. X. Liu²、T. Matsukawa²、S. Ouchi²、K. Sakamoto²、J. Tsukada²、Y. Ishikawa²、H. Yamauchi²、A. Ogura¹、M. Masahara^1,2 (1.Meiji Univ.(Japan)、2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-11] Hole Tunnel Currents in TiN/HfSiO_xN/SiO₂/p-Si(100) MOS Capacitors

Khairurrijal¹、F. A. Noor¹、M. Abdullah¹、 Sukirno¹、A. Ohta²、S. Miyazaki² (1.Institut Teknologi Bandung(Indonesia)、2.Hiroshima Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-12] Nanoscale Characterization of HfO₂/SiO_x Gate Stack Degradation by Scanning Tunneling Microscopy

K. S. Yew¹、Y. C. Ong¹、D. S. Ang¹、K. L. Pey¹、G. Bersuker²、P. S. Lysaght²、D. Heh² (1.Nanyang Tech. Univ.(Singapore)、2.SEMATECH(USA))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-13] Voltage Coefficient of Capacitance Modulation for Sm₂O₃/SiO₂ MIM Capacitors

J. J. Yang¹、J. D. Chen¹、R. Wise²、P. Steinmann²、M. B. Yu³、Y. C. Yeo¹、C. Zhu¹ (1.National Univ. of Singapore(Singapore)、2.Texas Instruments Inc.(USA)、3.Inst. Of Microelectronics(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-14] Properties of LaAlO Film after Waterless Process using Organic Solvent containing Anhydrous HF

M. Honjo¹、N. Komatsu¹、T. Masuzumi¹、H. Aoki¹、D. Watanabe¹、C. Kimura¹、T. Sugino¹ (1.Osaka Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-15] Atomistic Modeling of GeO₂/Ge and SiO₂/Si Interface Structures

T. Onda¹、H. Yamamoto¹、R. Tosaka¹、I. Ohdomari¹、T. Watanabe¹ (1.Waseda Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-16] Highly Reliable Silicon Dioxide Formation Technique with Plasma and Thermal oxidation

Y. Kabe¹、J. Kitagawa¹、Y. Hirota¹、S. Sato²、Z. Lu²、M. Sometani²、R. Hasunuma²、K. Yamabe² (1.Tokyo Electron AT Ltd.(Japan)、2.Univ. of Tsukuba(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-17] Enhancement of Carbon Diffusion Caused by Thermal Oxidation on Si_1-xC_x Alloy Layer / Si(001) Surafces

H. Hozumi¹、S. Ogawa¹、A. Yoshigoe²、S. Ishidzuka³、J. Harries²、Y. Teraoka²、Y. Takakuwa¹ (1.Tohoku Univ.(Japan)、2.Japan Atomic Energy Agency(Japan)、3.Akita National College of Tech.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-18] Infrared Semiconductor Laser Annealing Used for Activation of Silicon Implanted with Boron and Phosphorus Atoms

N. Sano¹、K. Ukawa²、T. Sameshima²、M. Naito³、N. Hamamoto³ (1.Hightec Systems Corp.(Japan)、2.Tokyo Univ. of Agri. And Tech.(Japan)、3.Nissin Ion Equipment Co., Ltd.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-19] Impact of Carbon Ion Implantation on the Thermal Stability of Nickel Silicide and Shallow Junction

C. M. Lee¹、B. Y. Tsui¹ (1.National Chiao Tung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード