[P-1-20] Ion-Implanted Boron Activation in a Preamorphized Si Layer by Microwave Annealing

K. Hara¹, Y. Tanushi¹, S. Kuroki¹, K. Kotani¹, T. Ito¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-21] Low Contact Resistance with Low Silicide/p⁺-Silicon Schottky Barrier for High Performance p-channel MOSFETs

H. Tanaka¹, T. Isogai¹, T. Goto¹, A. Teramoto¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-22] Mobility Behavior in Ge_1-xSn_x Layers Grown on SOI Substrates

N. Tsutsui¹, Y. Shimura¹, O. Nakatsuka¹, A. Sakai², S. Zaima¹ (1.Nagoya Univ.(Japan), 2.Osaka Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-23] Evaluation of anisotropic biaxial stress using an immersion lens by Raman analysis based on the polarization rules

D. Kosemura^1,3, M. Takei¹, K. Nagata¹, H. Akamatsu¹, R. Shimidzu², A. Ogura¹ (1.Meiji Univ.(Japan), 2.PHOTON Design Corp.(Japan), 3.JSPS(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-24] Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs

K. Eriguchi¹, Y. Nakakubo¹, A. Matsuda¹, M. Kamei¹, Y. Takao¹, K. Ono¹ (1.Kyoto Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-25] Mechanism for Generation of Molecular-Level Line-Edge Roughness of ArF photoresist during Plasma Etching Processes

K. Koyama¹, B. Jinnai¹, S. Maeda², K. Kato², A. Yasuda², H. Momose², S. Samukawa¹ (1.Tohoku Univ.(Japan), 2.Mitsubishi Rayon Co., Ltd.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-26] Mechanism of Mask Distortion during Resist Trimming

N. Kofuji¹, H. Miura² (1.Hitachi, Ltd.(Japan), 2.Tohoku Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-27] Effect of UV irradiation in plasma on Pohotoresist LER

A. Yabata¹, M. Takahashi¹, N. Kuriyama¹ (1.OKI Semiconductor Miyagi Co., Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-28] Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects

A. Matsuda¹, Y. Nakakubo¹, M. Kamei¹, Y. Takao¹, K. Eriguchi¹, K. Ono¹ (1.Kyoto Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-2-1] Self-Formation of Ti-Based Barrier Layers in Cu(Ti)/Porous-Low-k Samples

K. Ito¹, K. Kohama¹, T. Tanaka¹, K. Mori², K. Maekawa², Y. Shirai¹, M. Murakami³ (1.Kyoto Univ.(Japan), 2.Renesas Tech. Corp.(Japan), 3.The Ritsumeikan Trust(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download