Oxygen Plasma Process of Self-assembled Monolayer Gate Dielectric for 2-V Operation High-mobility Organic TFT

K. Kuribara; T. Nakagawa; K. Fukuda; T. Yokota; T. Sekitani; U. Zschieschang; H. Klauk; T. Someya; T. Yamamoto; K. Takimiya

doi:https://doi.org/10.7567/SSDM.2010.A-9-2

[A-9-2] Oxygen Plasma Process of Self-assembled Monolayer Gate Dielectric for 2-V Operation High-mobility Organic TFT

K. Kuribara¹, T. Nakagawa¹, K. Fukuda¹, T. Yokota¹, T. Sekitani¹, U. Zschieschang², H. Klauk², T. Someya¹, T. Yamamoto³, K. Takimiya³ (1.Univ. of Tokyo , Japan, 2.Max Planck Inst for Solid State Res. , Germany, 3.Hiroshima Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.A-9-2

2010 International Conference on Solid State Devices and Materials

[A-9-2] Oxygen Plasma Process of Self-assembled Monolayer Gate Dielectric for 2-V Operation High-mobility Organic TFT