2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[B-3-2] Oxygen vacancy mobility and diffusion coefficient determined from current measurements in SiO₂/HfO₂/TiN stacks

S. Zafar¹, H. Jagannathan¹, L. F. Edge¹, D. Gupta¹ (1.IBM , USA)

https://doi.org/10.7567/SSDM.2010.B-3-2

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